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MCQs

Total Questions : 90 | Page 1 of 9 pages
Question 1. The forbidden energy gap between the valence band and conduction band will be least in case of
  1.    Metals
  2.    Semiconductors
  3.    Insulators
  4.    All of the above
 Discuss Question
Answer: Option A. -> Metals
Question 2. For a NPN bipolar transistor, what is the main stream of current in the base region?
  1.    Drift of holes
  2.    Diffusion of holes
  3.    Drift of electrons
  4.    Diffusion of electrons
 Discuss Question
Answer: Option B. -> Diffusion of holes
Question 3. Assertion (A): A JFET can be used as a current source.Reason (R): In beyond pinch off region the current in JFET is nearly constant.
  1.    Both A and R are true and R is correct explanation of A
  2.    Both A and R are true but R is not a correct explanation of A
  3.    A is true but R is false
  4.    A is false but R is true
 Discuss Question
Answer: Option A. -> Both A and R are true and R is correct explanation of A
Question 4. For a P-N diode, the number of minority carriers crossing the junction depends on
  1.    Forward bias voltage
  2.    Potential barrier
  3.    Rate of thermal generation of electron hole pairs
  4.    None of the above
 Discuss Question
Answer: Option C. -> Rate of thermal generation of electron hole pairs
Question 5. An electron in the conduction band
  1.    Has higher energy than the electron in the valence band
  2.    Has lower energy than the electron in the valence band
  3.    Loses its charge easily
  4.    Jumps to the top of the crystal
 Discuss Question
Answer: Option A. -> Has higher energy than the electron in the valence band
Question 6. What is the necessary a.c. input power from the transformer secondary used in a half wave rectifier to deliver 500 W of d.c. power to the load?
  1.    1232 W
  2.    848 W
  3.    616 W
  4.    308 W
 Discuss Question
Answer: Option A. -> 1232 W
Question 7. A thermistor is a
  1.    Thermocouple
  2.    Thermometer
  3.    Miniature resistance
  4.    Heat sensitive explosive
 Discuss Question
Answer: Option C. -> Miniature resistance
Question 8. In an ideal diode there is no breakdown, no __________ current, and no forward __________ drop.
  1.    Reverse, voltage
  2.    Forward, current
  3.    Forward, voltage
  4.    Reverse, current
 Discuss Question
Answer: Option A. -> Reverse, voltage
Question 9. The dynamic resistance of a forward biased p-n diode
  1.    Varies inversely with current
  2.    Varies directly with current
  3.    Is constant
  4.    Is either constant or varies directly with current
 Discuss Question
Answer: Option A. -> Varies inversely with current
Question 10. Each cell of a static Random Access memory contains
  1.    6 MOS transistor
  2.    4 MOS transistor, 2 capacitor
  3.    2 MOS transistor, 4 capacitor
  4.    1 MOS transistor and 1 capacitor
 Discuss Question
Answer: Option A. -> 6 MOS transistor

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